Description

1.IGBT is a functional integration of Power MOSFETand BJT devices in monolithic form

2.  IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

3.  All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly.

  Feature

1).   Square RBSOA

2).   Low Saturation Voltage

3).  Overcurrent Limiting Function (~3 Times Rated Current)

4).   IGBT is three-terminal power semiconductor device

5).  High Frequency Operation

 Application

1).  AC Drive inverter

2).  Servo control

3).  UPS, Uninterruptible Power Supply

4).  Welding Power Supplies