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(Electronic components) BD131 BD132 TO-126F triode

Product details
Rated Current (Amps):standardVoltage - Rating:standard
Vgs(th)(max)@Id:standardIGBT type:standard
Installation type:standardDrain-source voltage (Vdss):standard
type of packaging:standardPackaging/Case:standard
Current Consumption (Id) - Max:standardCurrent - Continuous Drain (Id) @ 25°C:standard
Voltage - Cutoff (VGS off) @ Id:standardCurrent - Collector Cutoff (Max):standard
Current - Collector (Ic) (Max):standardInput Capacitance (Cies) @ Vce:standard
Voltage - Offset (Vt):standardInput Capacitance (Ciss) (Max) @ Vds:standard
Cross reference:standardCurrent - Peak:standard
Resistor - Base (R1):standardVce saturation (maximum) @ Ib, Ic:standard
Payment/Payment:standardPackaging Details:-
Power - Maximum:standardVoltage - Collector Emitter Breakdown (Max):standard
DC current gain (hFE) (min) @ Ic, Vce:standardRds On (Max) @ Id, Vgs:standard
enter:standardVoltage - Breakdown (V(BR)GSS):standard
Voltage - Output:standardCurrent - Valley (Iv):standard
brand:Yingshimodel:BD131 BD132
Types of:standardVgs (Max):standard
application:standardConfiguration:standard
Current - Drain (Idss) @ Vds (Vgs=0):standardDriving Voltage (Max Rds On, Min Rds On):standard
Supply capacity:10000 pieces per daystandard:standard
Resistance - RDS(On):standardbrand:standard
Operating temperature:standardFET type:standard
Voltage:standardResistor - Emitter Base (R2):standard
Noise Figure:standardpayment terms:L/C, Western Union, T/T, MoneyGram, PayPal
Gate charge (Qg) (maximum) @Vgs:standardplace of origin; place of origin:-
Current - Gate to Anode Leakage (Igao):standardNTC thermistor:standard
Vce(on)(maximum)@Vge, Ic:standardFET characteristics:standard
Power output:standardport:Shenzhen
Frequency - Transition:standardfrequency:standard
application:standardSupplier type:ODM,Agent,Retailer,Other
Product Description
Specification
thing
value
model
APT6035BVFR
Types of
-
brand
easy
direct current
-
type of packaging
-
application
-
supplier type
ODM, agent, retailer, others
cross reference
-
brand
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Maximum)
-
Vce saturation (maximum) @ Ib, Ic
-
Current - Collector Cutoff (Maximum)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - max
-
frequency - transition
-
Operating temperature
-
installation type
-
Packaging/Case
-
Resistor - Base (R1)
-
Resistor - Emitter Base (R2)
-
FET type
-
FET characteristics
-
Drain-source voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (max) @ Id
-
Gate charge (Qg) (maximum) @Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
frequency
-
Rated Current (Amps)
-
Noise Figure
-
power output
-
Voltage - Nominal
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Driving Voltage (Max Rds On, Min Rds On)
-
Vgs (max)
-
IGBT type
-
configuration
-
Vce(on) (max) @ Vge, Ic
-
Input capacitance (Cies) @ Vce
-
enter
-
NTC thermistor
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Consumption (Id) - Max
-
Voltage - Cutoff (VGS OFF) @ Id
-
Resistance - RDS(On)
-
Voltage
-
Voltage - output
-
Voltage - Offset (Vt)
-
Current - Gate to Anode Leakage (Igao)
-
Current - Valley (Iv)
-
current-peak
-
application
-
-
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