N-type single and double-sided heterojunction 9BB solar cells with gallium doping

N-type single and double-sided heterojunction solar cells (9BB)

Silicon heterojunction technology (HJT) is based on emitter and back surface field (BSF), which produces ultrathin amorphous silicon (a-Si:H) layers less than 170 μm thick by low temperature growth of ultrathin amorphous A wafer in which electrons and holes are photogenerated.

The cell process is accomplished by the deposition of transparent conductive oxides, which allow for excellent metallization. Metallization can be done by standard screen printing, which is widely used in industry for most batteries or with innovative techniques.

Heterojunction technology (HJT) silicon solar cells have attracted a lot of attention because they can achieve high conversion efficiencies of up to 25% while using low temperature processing, typically below 250°C throughout. Low processing temperatures allow processing of silicon wafers with thicknesses less than 100 μm while maintaining high yields.

Main features

High Eff and High Voc
Low temperature coefficient 5-8% power output maximum gain
Double-sided structure